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Introduction

The Wafer Level Burn-In (WLBI) test system is specifically designed for silicon carbide (SiC) and gallium nitride (GaN) wafers. It conducts long-term high-temperature gate bias (HTGB) and high-temperature reverse bias (HTRB) stress tests on wafers to efficiently screen for early-life failures. Featuring a visual interface, the system’s software supports online wafer map editing and generates comprehensive burn-in reports.

The Semi-Automated Burn-In System (B5260M) supports parallel processing of 6 wafers simultaneously, accommodates high-density probe cards, and with its high-voltage chuck can process up to 720 dies in a single burn-in cycle.

The Fully Automated Burn-In System (B5260) supports parallel processing of 12 wafers (6&8 inch) simultaneously and can process up to 2,640 dies in a single burn-in cycle. The system enables gate bias application during HTRB stress testing for diverse customer testing requirements.

Advantages

（1）Stable Test Environment

The system ensures precise temperature control and achieves overshoot-free heating at 10°C/min ramp rate with temperature uniformity within 1℃, maintaining fluctuations within ±1℃ after reaching setpoint temperature.

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（2）Wider Voltage Test Range

HTGB supports ±100V
HTRB supports 2000V (3000V planned)

（3）Reliable Test Accuracy

（4）Innovative Test Solution

HTRB test with simultaneous gate bias (supported by B5260)

（5）Probing Accuracy

Employs a tip-to-pad positioning method, ensuring fast, accurate, and stable performance with a repeat probing accuracy of under 20 μm.

（6）Reliable Optical Character Recognition (OCR) Solution

Employs a Keyence camera to read calibration marks, enabling exceptional accuracy.

（7）Efficient and Intelligent Software System

Features data visualization and real-time status tracking, with support for Excel and a custom Map generator.

B5260M Semi-Automated Software

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Progress Visualization: Real-time display of work progress and status

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（8）Fully Automated Software (B5260)

Fully automated with visualized operation and test resumption capability

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Product Specification

Parameter Type		Description
System Parameters	Wafer Size	4-inch, 6-inch (fully automated burn-in system supports for 8 inch)
	Burn-In Type	HTGB, HTRB. VTH
	System Power	<30KW (peak power)
	Channels per Layer	720 channels (fully automated burn-in system supports for 2,640 channels)
	System Chamber	6 chambers (up to 12 chambers in fully automated burn-in system)
	Independent Burn-in for Single-layer Wafer	Each layer operates independently, enabling batch burn-in
Measurement Performance	Temperature Range	RT-175°C (uniformity ±1°C)
	Voltage Range	Gate: ±100V; Source: 2000V (3000V planned)
	Voltage Accuracy	±100V SMU accuracy: 0.05%±20uV 2000V voltage source accuracy: 0.1%±10V
	Current Range	1uA/100uA/1mA/10mA/100mA
	Current Accuracy	1uA:0.2%±30pA 100uA:0.2%±1nA 1mA:0.2%±10nA 10mA:0.2%±150nA 100mA:0.2%±1μA
Protection Functions	Current/Voltage Overshoot	No EOS
	Wafer Heating	Temperature protection range settable for single-layer; heater powers off when exceeding range
	Output Current/Voltage Protection (independent control per channel)	HTGB: No output current/voltage overshoot, output short-circuit protection HTRB:No output current/voltage overshoot, output short-circuit protection, high-voltage discharge suppression
	Single-layer Nitrogen Purging	Prevents wafer surface burn-in, high-voltage arcing, and PAD oxidation and improves overall insulation performance
	Output Ramped Power-up	Supported

Summary

Wafer Level Burn-In test system effectively screens out chips with potential reliability flaws, ensuring the long-term reliability of packaged modules in future applications, reducing subsequent packaging and testing costs, and enhancing the quality of final products.